GaN Radar To Enhance Patriot Air Defense System
As a pioneer of gallium nitride semi-conductor technology Raytheon is testing GaN-based arrays for the Patriot air defense system
Raytheon has amassed around 3,000 hours run-time on the prototype GaN radar for Patriot.
Raytheon has amassed around 3,000 hours run-time on the prototype GaN radar for Patriot.

Drawing on internal and government R&D funds Raytheon has been a pioneer of gallium nitride (GaN) semiconductor technology, with its own foundry to produce durable, military-grade transmit/receive modules (TRMs) for active electronically scanned array radars. The technology is already employed in the company’s SPY-6(V) air and missile defense radar that is being developed for U.S. Navy vessels, and in the next-generation jammer for EA-18G Growler electronic warfare aircraft, and now it is considered as production-ready as part of the ongoing modernization effort for the Patriot air defense system.


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